Numerical analysis of charge carriers injection in a light emitter or detector device based on a metal-semiconductor-metal structure-Reference-Cited by-同舟云学术

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Numerical analysis of charge carriers injection in a light emitter or detector device based on a metal-semiconductor-metal structure

Published:2024-02 Issue: Volume:58 Page:101213
ISSN:1569-4410
Container-title:Photonics and Nanostructures - Fundamentals and Applications
language:en
Short-container-title:Photonics and Nanostructures - Fundamentals and Applications

Author:

Mahmoodpoor Abolfazl^ORCID,Makarov Sergey^ORCID

Funder

National Natural Science Foundation of China

Ministry of Education and Science of the Russian Federation

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. Gaas nanowire photodetectors based on au nanoparticles modification;Lin;Materials,2023

2. Improved high-performance ultraviolet photodetectors through controlled growth of zno lateral nanowires;Wang;J. Lumin.,2023

3. Review on iii-v semiconductor single nanowire-based room temperature infrared photodetectors;Li;Materials,2020

4. Review on iii–v semiconductor nanowire array infrared photodetectors;Li;Adv. Mater. Technol.,2023

5. Semiconductor nanowires: to grow or not to grow?;McIntyre;Mater. Today Nano,2020

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