Electrical, optical, and structural properties of GaN films prepared by hydride vapor phase epitaxy-Reference-Cited by-同舟云学术

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Electrical, optical, and structural properties of GaN films prepared by hydride vapor phase epitaxy

Published:2014-12 Issue: Volume:617 Page:200-206
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Polyakov A.Y.,Smirnov N.B.,Yakimov E.B.,Usikov A.S.,Helava H.,Shcherbachev K.D.,Govorkov A.V.,Makarov Yu N.,Lee In-Hwan

Funder

Ministry of Education and Science of the Russian

National Research Foundation of Korea

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference31 articles.

1. Bulk GaN crystals grown by HVPE;Fujito;J. Cryst. Growth,2009

2. III-Nitride Semi-conductor Materials;Dmitriev,2006

3. Development of bulk GaN crystals and nonpolar/semipolar substrates by HVPE;Fujito;MRS Bull.,2009

4. Defect structure ofa-plane GaN grown by hydride and metal-organic vapor phase epitaxy onr-plane sapphire

5. Preparation of 3 inch freestanding GaN substrates by hydride vapor phase epitaxy with void-assisted separation

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1. Emission and capture characteristics of deep hole trap in n-GaN by optical deep level transient spectroscopy;Journal of Semiconductors;2024-03-01

2. Capacitance Temperature Dependence Analysis of GaN-on-Si Power Transistors;Energies;2022-09-26

3. Two yellow luminescence bands in undoped GaN;Scientific Reports;2018-05-25

4. Proton irradiation effects on minority carrier diffusion length and defect introduction in homoepitaxial and heteroepitaxial n-GaN;Journal of Applied Physics;2017-12-21

5. Evaluation of the concentration of point defects in GaN;Scientific Reports;2017-08-24

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