Plasma-activated nitrogen-doped p-type ZnO thin films with multi-buffer-layers grown on sapphire (0001) by L-MBE-Reference-Cited by-同舟云学术

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Plasma-activated nitrogen-doped p-type ZnO thin films with multi-buffer-layers grown on sapphire (0001) by L-MBE

Published:2009-06 Issue:1-2 Volume:478 Page:325-329
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Wang Dong,Zhang Jingwen,Peng Yunpeng,Bi Zhen,Bian Xuming,Zhang Xin’an,Hou Xun

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference19 articles.

1. The Luminescence of ZnO under High One- and Two-Quantum Excitation

2. Recent advances in ZnO materials and devices

3. Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO

4. Metal-Semiconductor-Metal Photodiode Ultraviolet Detector Based on High Quality ZnO

5. Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering

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3. Investigation on the Deposition of an AlN-ZnO/ZnO/AlN-ZnO Double Heterojunction Structure Using Radio Frequency Magnetron Cosputtering Technology;Coatings;2019-08-25

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