High temperature ferroelectric domain wall memory-Reference-Cited by-同舟云学术

High temperature ferroelectric domain wall memory

Published:2021-03 Issue: Volume:856 Page:158155
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Jiang Jun^ORCID,Chai Xiaojie,Wang Chao^ORCID,Jiang Anquan

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference41 articles.

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3. Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories;Jiang;Nat. Mater.,2018

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5. Conduction of topologically protected charged ferroelectric domain walls;Wu;Phys. Rev. Lett.,2012

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