High temperature ferroelectric domain wall memory-Reference-Cited by-同舟云学术

High temperature ferroelectric domain wall memory

Published:2021-03 Issue: Volume:856 Page:158155
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Jiang Jun^ORCID,Chai Xiaojie,Wang Chao^ORCID,Jiang Anquan

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference41 articles.

1. High-temperature thermal stability driven by magnetization dilution in CoFeB free layers for spin-transfer-torque magnetic random access memory;Iwata-Harms;Sci. Rep.,2018

2. 7.3 A 28nm embedded SG-MONOS flash macro for automotive achieving 200MHz read operation and 2.0MB/S write throughput at Ti, of 170°C;Taito;2015 IEEE Int. Solid State Circuits Conf. Digest Tech. Papers,2015

3. Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories;Jiang;Nat. Mater.,2018

4. Controlled creation and displacement of charged domain walls in ferroelectric thin films;Feigl;Sci. Rep.,2016

5. Conduction of topologically protected charged ferroelectric domain walls;Wu;Phys. Rev. Lett.,2012

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