Improving photovoltaic effect of inorganic perovskite by resistive switching using various electrode materials-Reference-Cited by-同舟云学术

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Improving photovoltaic effect of inorganic perovskite by resistive switching using various electrode materials

Published:2021-04 Issue: Volume:859 Page:157767
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Wang Guangyu,Wang Hong,Jin Xuan,Agrawal Vikash,Xu Qingyu

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference46 articles.

1. Redox-based resistive switching memories - nanoionic mechanisms, prospects, and challenges;Waser;Adv. Mater.,2009

2. High-performance solution-processed organo-metal halide perovskite unipolar resistive memory devices in a cross-bar array structure;Kang;Adv. Mater.,2019

3. Unipolar resistive switching effect in YMn1−δO3 thin films;Yan;Appl. Phys. Lett.,2010

4. Resistive switching and nonvolatile memory in TiO2/CuPc nanocomposite devices;Mukherjee;J. Electron. Mater.,2019

5. Reversible voltage dependent transition of abnormal and normal bipolar resistive switching;Wang;Sci. Rep.,2016

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nonvolatile resistive switching in interface-dominated memristors utilizing two-dimensional Cs2Pb(SCN)2Br2 perovskite films;Applied Physics Letters;2024-04-22

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