Transforming g-C3N4 from amphoteric to n-type semiconductor: The important role of p/n type on photoelectrochemical cathodic protection-Reference-Cited by-同舟云学术

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Transforming g-C3N4 from amphoteric to n-type semiconductor: The important role of p/n type on photoelectrochemical cathodic protection

Published:2021-01 Issue: Volume:851 Page:156820
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Jing Jiangping,Chen Zhuoyuan,Feng Chang,Sun Mengmeng,Hou Jian

Funder

National Natural Science Foundation of China

China Postdoctoral Science Foundation

Key Research and Development Program of Shandong Province

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference46 articles.

1. A metal-free polymeric photocatalyst for hydrogen production from water under visible light;Wang;Nat. Mater.,2009

2. Graphitic carbon nitride (g-CN)-based photocatalysts for artificial photosynthesis and environmental remediation: are we a step closer to achieving sustainability?;Ong;Chem. Rev.,2016

3. Two-dimensional covalent carbon nitride nanosheets: synthesis, functionalization, and applications;Zhang;Energy Environ. Sci.,2015

4. Mesoporous carbon nitrides: synthesis, functionalization, and applications;Lakhi;Chem. Soc. Rev.,2017

5. Precise formation of a hollow carbon nitride structure with a janus surface to promote water splitting by photoredox catalysis;Zheng;Angew. Chem. Int. Ed.,2016

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