Dual-source device architecture for self-diagnosis and correction of gate bias-stress instability in flexible transparent ZnO thin-film transistors

Author:

Zhang YonghuiORCID,Mei Zengxia,Li Junqiang,Liang Huili,Du Xiaolong

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference37 articles.

1. Flexible transparent high-voltage diodes for energy management in wearable electronics;Zhang;Nano Energy,2017

2. Flexible ZnO thin-film transistors on thin copper substrate;Huo;IEEE Trans. Electron Devices,2018

3. Flexible transparent field-effect diodes fabricated at low-temperature with all-oxide materials;Zhang;Adv. Electron. Mater.,2016

4. Flexible transparent InGaZnO thin-film transistors on muscovite mica;Huo;IEEE Trans. Electron Devices,2019

5. Field-effect transistors on photonic cellulose nanocrystal solid electrolyte for circular polarized light sensing;Grey;Adv. Funct. Mater.,2019

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