Low dark current and high stability X-ray detector based on FAPbI3/Ga2O3 heterojunction

Author:

Chen Manni,Zhang Zhipeng,Wen Bin,Zhan Runze,Wang Kai,Deng Shaozhi,Xie Jiangsheng,Chen JunORCID

Funder

National Natural Science Foundation of China

Guangdong Science and Technology Department

Fundamental Research Funds for the Central Universities

Basic and Applied Basic Research Foundation of Guangdong Province

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference52 articles.

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3. Flexible X-ray detectors based on amorphous Ga2O3 thin films;Liang;ACS Photonics,2019

4. Sensitive direct-conversion X-ray detectors formed by ZnO nanowire field emitters and beta-Ga2O3 photoconductor targets with an electron bombardment induced photoconductivity mechanism;Zhang;Photon. Res.,2021

5. X-ray photoconductors and stabilized a-Se for direct conversion digital flat-panel X-ray image-detectors;Kasap;J. Mater. Sci.: Mater. Electron.,2000

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