Enhancing the performance of β-Ga2O3 solar-blind photodetectors based on ZnGa2O4 substrate by bottom-up Zn diffusion doping-Reference-Cited by-同舟云学术

Enhancing the performance of β-Ga2O3 solar-blind photodetectors based on ZnGa2O4 substrate by bottom-up Zn diffusion doping

Published:2023-12 Issue: Volume:969 Page:171596
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Yuan Yuan,Li Zhengyuan,Hou Xiaohu,Zhao Xiaolong,Ding Mengfan,Yu Shunjie,Wang Zhiwei,Liu Jinyang,Xu Guangwei,Jia Zhitai,Tao Xutang,Mu Wenxiang,Long Shibing^ORCID

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

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4. Toward emerging gallium oxide semiconductors: A roadmap;Yuan;Fundam. Res.,2021

5. High-performance vertical beta Ga2O3 schottky barrier diode with implanted edge termination;Zhou;IEEE Electron Device Lett.,2019

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1. Comprehensively Enhanced Performance of MISIM β-Ga₂O₃ Solar-Blind Photodetector Inserted With an Ultrathin Al₂O₃ Passivation Layer;IEEE Transactions on Electron Devices;2024-06

2. Superior performance of ZnGaO solar-blind photodetectors by Implementing TFT structure and tunable ZnO cycle ratio;Materials Today Chemistry;2024-06