Effective enhancement of light yield achieved in Bi4Si3O12 scintillation single crystals by doping with tantalum ions-Reference-Cited by-同舟云学术

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Effective enhancement of light yield achieved in Bi4Si3O12 scintillation single crystals by doping with tantalum ions

Published:2023-10 Issue: Volume:960 Page:170754
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Xu Jiayue,Pan Yunfang,Tian Tian^ORCID,Mao Chengling^ORCID,Feng Haiwei,Ma Yunfeng^ORCID,Shao Hezhu^ORCID

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference50 articles.

1. Bismuth silicate Bi4Si3O12, a faster scintillator than Bismuth germanate Bi4Ge3O12;Kobayashi;Nucl. Instrum. Meth. A,1996

2. Development of BSO (Bi4Si3O12) crystal for radiation detector;Ishii;Opt. Mater..,2002

3. Bridgman growth of Bi4Si3O12 scintillation crystals and doped effects on radiation resistance;Fei;Prog. Cryst. Growth Ch.,2000

4. Growth and spectroscopic properties of Yb:BSO;Zhang;Single Cryst. J. Cryst. Growth,2011

5. Scintillation properties of Bi4(Ge1−xSix)3O12 single crystals grown by Czochralski method.;Hua;J. Cryst. Growth.,2013

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