Electronic properties of the semiconductor TiSe2
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference13 articles.
1. Band structure and lattice instability of TiSe2
2. Angle-resolved photoemission studies of the band structure of TiSe2and TiS2
3. Three-Dimensional and Relativistic Effects in Layered1T-TiSe2
4. Charge-density-wave phase transition in1T−TiSe2: Excitonic insulator versus band-type Jahn-Teller mechanism
5. Photoinduced Quantum Interference Antiresonances inπ-Conjugated Polymers
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of an inner-transition metal (Dy) intercalation on the structure and magnetic properties of 1T–TiSe2;Journal of Solid State Chemistry;2023-02
2. First principles study of the structural, optoelectronic and mechanical properties of XLaS2 (X Cu, Zn) for optoelectronic applications;Optik;2022-05
3. Low temperature thermoelectric properties of Cu intercalated TiSe2: a charge density wave material;Applied Physics A;2013-01-19
4. Spectroscopy and population decay of a van der Waals gap state in layeredTiSe2;Physical Review B;2010-07-15
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