Exploring the role of nitrogen incorporation in ZrO2 resistive switching film for enhancing the device performance-Reference-Cited by-同舟云学术

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Exploring the role of nitrogen incorporation in ZrO2 resistive switching film for enhancing the device performance

Published:2019-02 Issue: Volume:775 Page:1301-1306
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Wei Xiaodi,Huang Hong,Ye Cong^ORCID,Wei Wei,Zhou Hao,Chen Yong,Zhang Rulin,Zhang Li,Xia Qing

Funder

National Nature Science Foundation of China

Institute of Microelectronics of the Chinese Academy of Sciences

National Key Research and Development Program

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference42 articles.

1. Interface engineering of ALD HfO2-based RRAM with Ar plasma treatment for reliable and uniform switching behaviors;Ku;J. Alloys Compd.,2018

2. Confining cation injection to enhance CBRAM performance by nanopore graphene layer;Zhao;Small,2017

3. Impact of device area and film thickness on performance of sol-gel processed ZrO2 RRAM;Lee;IEEE Electron. Device Lett.,2018

4. Self-rectifying resistive switching behavior observed in Al2O3-based resistive switching memory devices with p-AlGaN semiconductor bottom electrode;Kim;J. Alloys Compd.,2018

5. Resistive switching behavior in copper doped zinc oxide (ZnO:Cu) thin films studied by using scanning probe microscopy techniques;Xiao;J. Alloys Compd.,2017

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