Reducing stimulated emission threshold power density of AlGaN/AlN multiple quantum wells by nano-trench-patterned AlN template

Author:

Ni RuxueORCID,Chen XiangORCID,Yan Jianchang,Zhang Lian,Guo Yanan,Wang Junxi,Li Jinmin,Zhang YunORCID

Funder

national key R&D program of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference33 articles.

1. Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates;Li;Appl. Phys. Lett.,2014

2. III-nitride Ultraviolet Emitters;Kneissl,2016

3. UV-C Lasing from AlGaN multiple quantum wells on different types of AlN/sapphire templates;Jeschke;IEEE Photon. Technol. Lett.,2015

4. Self-planarized quantum-disks-in-nanowires ultraviolet-B emitters utilizing pendeo-epitaxy;Janjua;Nanoscale,2017

5. III–nitride UV devices;Khan;Jpn. J. Appl. Phys.,2005

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