Reducing stimulated emission threshold power density of AlGaN/AlN multiple quantum wells by nano-trench-patterned AlN template-Reference-Cited by-同舟云学术

Reducing stimulated emission threshold power density of AlGaN/AlN multiple quantum wells by nano-trench-patterned AlN template

Published:2019-03 Issue: Volume:777 Page:344-349
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Ni Ruxue^ORCID,Chen Xiang^ORCID,Yan Jianchang,Zhang Lian,Guo Yanan,Wang Junxi,Li Jinmin,Zhang Yun^ORCID

Funder

national key R&D program of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference33 articles.

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3. UV-C Lasing from AlGaN multiple quantum wells on different types of AlN/sapphire templates;Jeschke;IEEE Photon. Technol. Lett.,2015

4. Self-planarized quantum-disks-in-nanowires ultraviolet-B emitters utilizing pendeo-epitaxy;Janjua;Nanoscale,2017

5. III–nitride UV devices;Khan;Jpn. J. Appl. Phys.,2005

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