Emission spectra from AlN and GaN doped with rare earth elements

Author:

Choi Sung Woo,Emura Shuichi,Kimura Shigeya,Kim Moo Seong,Zhou Yi Kai,Teraguchi Nobuaki,Suzuki Akira,Yanase Akira,Asahi Hajime

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference13 articles.

1. Luminescent Materials;Blasse,1994

2. Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials

3. Room-temperature observation of ferromagnetism in diluted magnetic semiconductor GaGdN grown by RF-molecular beam epitaxy

4. M. Hashimoto, K. Araki, K. Sato, H. Asahi, H. Katayama-Yoshida, Extend Abstracts of the Eighth Symposium on the Physics and Application of Spin-related Phenomena in Semiconductors, Sendai, Japan, 2002, pp. 165–168.

5. Growth of AlN films on SiC substrates by RF-MBE and RF-MEE

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