HgCdMnZnTe: new material for IR photoelectronics-Reference-Cited by-同舟云学术

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HgCdMnZnTe: new material for IR photoelectronics

Published:2004-05 Issue:1-2 Volume:371 Page:114-117
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Gorbatyuk I.M,Ostapov S.E,Rarenko I.M

Funder

Science and Technology Center in Ukraine

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference19 articles.

1. The properties and applications of the Hg1−xCdxTe alloy system

2. Long‐term Hall‐type conversion by vacancy diffusion in Hg1−xCdxTe at room temperature

3. On the long‐term stability of CdxHg1−xTe at 300 K

4. Temperature stability of the IBM-formed Cd<formula><inf><roman>x</roman></inf></formula>Hg<formula><inf><roman>1-x</roman></inf></formula>Te p-n structure

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Infrared detector materials alternative to CdHgTe;Journal of Optical Technology;2007-03-01

2. HgCdMnZnTe: Growth and physical properties;Journal of Alloys and Compounds;2006-10

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