An innovative approach for controlled epitaxial growth of GaAs in real MOCVD reactor environment-Reference-Cited by-同舟云学术

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An innovative approach for controlled epitaxial growth of GaAs in real MOCVD reactor environment

Published:2019-11 Issue: Volume:809 Page:151752
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Saxena Praveen K.^ORCID,Srivastava Pankaj,Trigunayat R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference32 articles.

1. Instabilities in crystal growth by atomic or molecular beams;Politi;Phys. Rep.,2000

2. Thin Films: Heteroepitaxial Systems,1999

3. Physics of Crystal Growth;Pimpinelli,1998

4. Learning universality and scaling from simple deposition models;Santini;Am. J. Phys.,2018

5. Thin Films: Heteroepitaxial Systems,1999

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