Electrical characterization of Au/3C-SiC/n-Si/Al Schottky junction
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference29 articles.
1. Silicon carbide as a new MEMS technology
2. Analysis of mechanical properties of N2 in situ doped polycrystalline 3C-SiC thin films by chemical vapor deposition using single-precursor hexamethyildisilane
3. The effect of the electron irradiation on the series resistance of Au/Ni/6H-SiC and Au/Ni/4H-SiC Schottky contacts
4. Thermal CVD synthesis and photoluminescence of SiC/SiO2 core–shell structure nanoparticles
5. Microstructural characterization of nanocrystalline SiC synthesized by high-energy ball-milling
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1. Three-Dimensional Epitaxy of Low-Defect 3C-SiC on a Geometrically Modified Silicon Substrate;Materials;2024-03-30
2. Deep and Near UV Photodetector Based Upon Zirconium Diboride and n-Doped Silicon Carbide;IEEE Sensors Journal;2024-03-01
3. Solution Processed Schottky Diodes Enabled by Silicon Carbide Nanowires for Harsh Environment Applications;Nano Letters;2023-04-03
4. Experimental and Physics-Based Study of the Schottky Barrier Height Inhomogeneity and Associated Traps Affecting 3C-SiC-on-Si Schottky Barrier Diodes;IEEE Transactions on Industry Applications;2021-09
5. Effect of amorphous SiC layer on electrical and optical properties of Al/a-SiC/c-Si Schottky diode for optoelectronic applications;Journal of Materials Science: Materials in Electronics;2021-07-16
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