Site preference and diffusion behaviors of H influenced by the implanted-He in 3C-β SiC-Reference-Cited by-同舟云学术

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Site preference and diffusion behaviors of H influenced by the implanted-He in 3C-β SiC

Published:2018-04 Issue: Volume:742 Page:226-231
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Wang Sen,He H.Y.,Ding R.,Chen J.L.,Pan B.C.

Funder

National Magnetic Confinement Fusion Program

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference38 articles.

1. Silicon carbide composites as fusion power reactor structural materials

2. Progress in blanket designs using SiCf/SiC composites

3. Radiation effects in SiC for nuclear structural applications

4. Continuous SiC fiber, CVI SiC matrix composites for nuclear applications: Properties and irradiation effects

5. High heat flux test of SiC coated doped graphite

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Release behavior of an interstitial helium atom from 3C-SiC(100) subsurface: A first-principles study;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2024-08

2. Effect of H and Pd atoms on the migration of He atoms in 3C–SiC;Progress in Nuclear Energy;2023-11

3. Hydrogen-promoted in-void diffusion of helium in a 3C-SiC(310) twin boundary: a first-principles study;Molecular Physics;2023-05-09

4. Investigation of Exfoliation Efficiency of 6H-SiC Implanted Sequentially with He+ and H2+ Ions;Materials;2022-04-18

5. Numerical study of silicon vacancy color centers in silicon carbide by helium ion implantation and subsequent annealing;Nanotechnology;2021-12-24

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