Growth and thermal properties of various In2Se3 nanostructures prepared by single step PVD technique-Reference-Cited by-同舟云学术

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Growth and thermal properties of various In2Se3 nanostructures prepared by single step PVD technique

Published:2019-01 Issue: Volume:773 Page:698-705
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Botcha V. Divakar,Hong Yuehua,Huang Zhonghui,Li Zhiwen,Liu Qiang,Wu Jing,Lu Youming,Liu Xinke

Funder

National Key Research and Development Plan

National Natural Science Foundation of China

Public welfare capacity building in Guangdong Province

Science and Technology Foundation of Shenzhen

Natural Science Foundation of Guangdong Province

Natural Science Foundation of SZU

Shenzhen Key Laboratory of Microscale Optical Information Technology

National Taipei University of Technology- Shenzhen University Joint Research Program

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference53 articles.

1. High thermoelectric performance of In4Se3-based materials and the influencing factors;Yin;Acc. Chem. Res.,2018

2. Recent advances in investigations of the electronic and optoelectronic properties of group III, IV, and V selenide based binary layered compounds;Wasala;J. Mater. Chem. C,2017

3. Self-powered solar-blind photodetector with fast response based on Au/β-Ga2O3 nanowires array film Schottky junction;Chen;ACS Appl. Mater. Interfaces,2016

4. Controlled synthesis of high-quality monolayered α-in2Se3 via physical vapor deposition;Zhou;Nano Lett.,2015

5. Phonon and Raman scattering of two-dimensional transition metal dichalcogenides from monolayer, multilayer to bulk material;Zhang;Chem. Soc. Rev.,2015

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4. Phonon thermal transport in ferroelectric α-In2Se3 via first-principles calculations;Nanotechnology;2023-12-04

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