Ion beam-assisted solid phase epitaxy of SiGe and its application for analog memristors-Reference-Cited by-同舟云学术

Ion beam-assisted solid phase epitaxy of SiGe and its application for analog memristors

Published:2021-12 Issue: Volume:884 Page:161086
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Kim Keonhee,Kang Dae Cheol,Jeong Yeonjoo,Kim Jaewook,Lee Suyoun,Kwak Joon Young,Park Jongkil,Hwang Gyu Weon,Lee Kyeong-Seok,Ju Byeong-Kwon,Park Jong Keuk,Kim Inho

Funder

National Research Foundation of Korea

Korea Institute of Science and Technology

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference58 articles.

1. Memory system architecture for the data centric computing;Takeuchi;Jpn. J. Appl. Phys.,2016

2. Memory devices and applications for in-memory computing;Sebastian;Nat. Nanotechnol.,2020

3. C. Mead , Neuromorphic electronic systems, in: IEEE Electron Device Lett, 1990, pp. 1629–1636.

4. Memory and Information Processing in Neuromorphic Systems;Indiveri;Proc. IEEE Inst. Electr. Electron Eng.,2015

5. Face classification using electronic synapses;Yao;Nat. Commun.,2017

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