1. L. Li, M. Chan, Scaling analysis of Phase Change Memory (PCM) driving devices, in: Proceedings of the 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC, December 8, 2008 - December 10, 2008. 2008. Hong Kong, China: Inst. of Elec. and Elec. Eng. Computer Society.
2. Uncovering β-relaxations in amorphous phase-change materials;Peng;Sci. Adv.,2020
3. Phase change memory materials: rationalizing the dominance of Ge/Sb/Te alloys;Jones;Phys. Rev. B,2020
4. Characterization of In20Ge15Sb10Te55 phase change material for phase change memory with low power operation and good data retention;Morikawa;Jpn. J. Appl. Phys.,2012
5. H.S.P. Wong, S. Raoux, S. Kim, et al. Phase change memory. in Special Issue on Nanoelectronics Research for Beyond Cmos Information Processing. 2010. 445 Hoes Lane / P.O. Box 1331, Piscataway, NJ 08855-1331, United States: Institute of Electrical and Electronics Engineers Inc.