RbCeX2 Crystal (X = S, Se, Te): Pressure-Induced Spin-Selective Gapless Transition and Response Properties-Reference-Cited by-同舟云学术

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RbCeX2 Crystal (X = S, Se, Te): Pressure-Induced Spin-Selective Gapless Transition and Response Properties

Published:2022-03 Issue: Volume:898 Page:162760
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Azzouz Lahcene,Halit Mohamed,Denawi Hassan,Charifi Zoulikha,Baaziz Hakim,Rérat Michel,Matta Chérif F.

Funder

NSERC

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference80 articles.

1. Quantum crystallography: Current developments and future perspectives;Genoni;Chem. Eur. J,2018

2. The growth of crystals under external pressure;Stephen;Am. J. Sci.,1916

3. Electronic structure of materials under pressure;Christensen;Int. J. Quantum Chem.,2000

4. Semimetallic character of TiSe2 and semiconductor character of TiS2 under pressure;Friend;J. Phys. C,1977

5. Continuous and discontinuous semiconductor-metal transition in samarium monochalcogenides under pressure;Jayaraman;Phys. Rev. Lett.,1970

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1. Advances, optical and electronic applications of functional materials based on rare earth sulfide semiconductors;Materials & Design;2024-02

2. Comprehensive Analysis of the Structural, Electronic, Elastic, and Optical Properties of SrS Compound Under Pressure: First-Principles Calculations;Brazilian Journal of Physics;2024-01-31

3. Electronic and Magnetic Properties of New Diluted Magnetic Semiconducting Nay1-Xcexse2alloys;2024

4. Tuning Novel NaLaS_2(1–x)(Se or Te)_2x Alloys as Light-Absorbing Materials by Dopant-Induced Crystallographic Phase and Electronic Structure Transitions;The Journal of Physical Chemistry C;2023-08-25

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