Influence of induced defects on transport properties of the Bridgman-grown Bi2Se3-based single crystals-Reference-Cited by-同舟云学术

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Influence of induced defects on transport properties of the Bridgman-grown Bi2Se3-based single crystals

Published:2016-10 Issue: Volume:682 Page:225-231
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Wu K.K.,Ramachandran B.,Kuo Y.K.,Sankar R.,Chou F.C.

Funder

Ministry of Science and Technology

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference45 articles.

1. Observation of a large-gap topological-insulator class with a single Dirac cone on the surface

2. Spin-orbit interaction effect in the electronic structure of Bi 2 Te 3 observed by angle-resolved photoemission spectroscopy

3. Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

4. The next generation

5. Topological Insulators in Three Dimensions

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1. Improvement in thermoelectric figure of merit of Bi2Se3 crystal with Sulfur substitution;Journal of Crystal Growth;2024-10

2. Enhancing thermoelectric behavior of Bismuth Selenide crystal via substitution of Sulfur and Tellurium;Solid State Sciences;2024-05

3. Bulk Conducting States of Intrinsically Doped Bi₂Se₃;The Journal of Physical Chemistry C;2024-02-22

4. Crystal growth and thermoelectric properties of Sn-doped Bi2Se3;Journal of Crystal Growth;2024-02

5. Influence of indium and selenium co-doping on structural and thermoelectric properties of Bi2Te3 alloys;Journal of Materials Science: Materials in Electronics;2023-05

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