Temperature dependent of electrical characteristics of Au/n-GaAs/In Schottky diode with In2S3 interfacial layer obtained by using spray pyrolysis method
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference67 articles.
1. Metal-semiconductor Schottky Barrier Junctions and Their Applications;Sharma,1984
2. Electronic Materials Handbook;Minges,1989
3. Semiconductor Surfaces and Interfaces;Mönch,2001
4. Temperature dependent current-transport mechanism in Au/(Zn-doped)PVA/n-GaAs Schottky barrier diodes (SBDs)
5. On the difference in the apparent barrier height of inhomogeneous Schottky diodes with a Gaussian distribution
Cited by 22 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Investigation Of The Schottky Diode Performance of a new Diaminomaleonitrile‐Based Organic Material with D‐Π‐A Architecture;ChemistrySelect;2024-06-20
2. A comprehensive review on piezoelectric inks: From concept to application;Sensors and Actuators A: Physical;2024-02
3. Bacterial MgSe complex nanoparticle synthesis and electrical characterization of fabricated Ag/MgSe/p-Si hetero-structure under dark and illumination;Heliyon;2023-11
4. A novel thiophene-based D-π-A type organic material: Synthesis, characterization and Schottky diode applications;Journal of Photochemistry and Photobiology A: Chemistry;2023-09
5. Analysis of temperature dependent current-voltage and frequency dependent capacitance-voltage characteristics of Au/CoO/p-Si/Al MIS diode;Microelectronics Reliability;2023-08
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3