An insight into doping mechanism in Sn–F co-doped transparent conducting ZnO films by correlating structural, electrical and optical properties-Reference-Cited by-同舟云学术

An insight into doping mechanism in Sn–F co-doped transparent conducting ZnO films by correlating structural, electrical and optical properties

Published:2015-10 Issue: Volume:646 Page:56-62
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Mallick Arindam,Sarkar Sanjit,Ghosh Tushar,Basak Durga

Funder

US–India Partnership to Advance Clean Energy-Research (PACE-R) for the Solar Energy Research Institute for India

United States

US Department of Energy (Office of Science, Office of Basic Energy Sciences, and Energy Efficiency and Renewable Energy, Solar Energy Technology Program

National Renewable Energy Laboratory, Golden, Colorado) and the Government of India

Department of Science and Technology

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference63 articles.

1. Stable ZnO thin film transistors by fast open air atomic layer deposition

2. Bulk heterojunction solar cells with internal quantum efficiency approaching 100%

3. Enhanced efficiency of GaN-based light-emitting diodes with periodic textured Ga-doped ZnO transparent contact layer

4. Enhanced optical power and low forward voltage of GaN-based light-emitting diodes with Ga-doped ZnO transparent conducting layer

5. Textured aluminum‐doped zinc oxide thin films from atmospheric pressure chemical‐vapor deposition

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