Post annealing effects on the structural, compositional, optical and dielectric properties of Cd doped GaSe thin films

Author:

Al Garni S.E.,Qasrawi A.F.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference21 articles.

1. H. Liang, Absorber layer for a thin film photovoltaic device with a double-graded band gap, U.S. Patent No: US 8664033 B”, March, 2014.

2. J.D. Myers, J.A. Frantz, R.Y. Bekele, J.S. Sanghera, I.D. Aggarwal, Controlled deposition of photovoltaic thin films using interfacial wetting layers U.S. Patent No: US20140076402 A1, March 2014.

3. Charge conduction mechanisms and photovoltaic properties of n-(Ga2S3-Ga2Se3)/p-Si heterojunctions

4. Epitaxy and Photoresponse of Two-Dimensional GaSe Crystals on Flexible Transparent Mica Sheets

5. Ultra-broadband terahertz time-domain ellipsometric spectroscopy utilizing GaP and GaSe emitters and an epitaxial layer transferred photoconductive detector

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