High performance resistive memory device based on highly stable layered CsPb2Br5 perovskite polymer nanocomposite-Reference-Cited by-同舟云学术

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High performance resistive memory device based on highly stable layered CsPb2Br5 perovskite polymer nanocomposite

Published:2022-11 Issue: Volume:921 Page:166014
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Li Huabei,Wang Xiaolin,Chu Hongying,Yao Xinding

Funder

Key Scientific Research Project of Colleges and Universities in Henan Province

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference40 articles.

1. Down-scaling of resistive switching to nanoscale using porous anodic alumina membranes;Kolar;J. Mater. Chem. C,2014

2. Carrier transport and memory mechanisms of multilevel resistive memory devices with an intermediate state based on double-stacked organic/inorganic nanocomposites;Ma;Org. Electron.,2016

3. Air-stable cesium lead iodide perovskite for ultra-low operating voltage resistive switching;Han;Adv. Funct. Mater.,2018

4. Optimizing endurance performance of Ga2O3 random resistive access memories by altering oxygen vacancy content;Li;Ceram. Int.,2022

5. A two-dimensional hexagonal boron nitride/polymer nanocomposite for flexible resistive switching devices;Siddiqui;J. Mater. Chem. C,2017

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fluorinated Quinoxaline-Based Conjugated Polymers for High-Density Nonvolatile Memory Devices;ACS Applied Polymer Materials;2024-04-18

2. A comprehensive study on structural, optical, electrical, and dielectric properties of PVA-PVP/Ag-TiO2 nanocomposites for dielectric capacitor applications;Journal of Alloys and Compounds;2024-03

3. Significance of polymer matrix on the resistive switching performance of lead-free double perovskite nanocomposite based flexible memory device;Ceramics International;2023-08

4. Simultaneously elevating the resistive switching level and ambient-air-stability of 3D perovskite (TAZ-H)PbBr3-based memory device by encapsulating into polyvinylpyrrolidone;Journal of Colloid and Interface Science;2023-07

5. Generation of Hybrid Lead Halide CH3NH3PbI3-xClx Perovskite Crystals via Convective Self-Assembly;Coatings;2023-06-20

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