Ge incorporation in kesterite thin films by solution processing route: An in-depth study of structural and optoelectronic properties
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference43 articles.
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3. Development of Cu2ZnSnS4 films from a non-toxic molecular precursor ink and theoretical investigation of device performance using experimental outcomes;Mora-Herrera;Sol. Energy,2020
4. Bandgap engineering of Cu2ZnSn1−xGexSe4 by adjusting Sn-Ge ratios for almost full solar spectrum absorption;Chen;J. Alloy. Compd.,2017
5. Improvement of voltage deficit of Ge-incorporated kesterite solar cell with 12.3% conversion efficiency;Kim;Appl. Phys. Express,2016
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of Ge content on diode parameters of superstrate type Cu2ZnSn1−xGexS4/CdS heterostructures prepared by all-solution process;Journal of Materials Science;2024-02
2. Tailoring the electrical properties of Cu2ZnSnS4 thin film by heterovalent Al3+ doping;Ceramics International;2023-04
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