KKR–CPA study of electronic structure and relative stability of Mg2X (X=Si, Ge, Sn) thermoelectrics containing point defects
Author:
Funder
Polish National Science Centre
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference19 articles.
1. Highly effectiveMg2Si1−xSnxthermoelectrics
2. Thermoelectric Properties of Hot-Pressed Materials Based on Mg2Si n Sn1−n
3. Calculating electron transport coefficients of disordered alloys using the KKR-CPA method and Boltzmann approach: Application to Mg2Si1−xSnxthermoelectrics
4. Importance of relativistic effects in electronic structure and thermopower calculations forMg2Si,Mg2Ge, andMg2Sn
5. Diffusion and defect data solid state data. Pt. B;Tobola;Solid State Phenomena,2013
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2. Hydrogen Solution in Tetrahedral Interstitial Sites in ZrCo Hydrides: A First-Principles Study;Fusion Science and Technology;2023-05-11
3. Effects of Oxygen on Lattice Defects in Single-Crystalline Mg2Si Thermoelectrics;Nanomaterials;2023-03-30
4. First-principles study on the crystal structure stability and hydrogen storage mechanism of hydrogen occupancy in interstitial sites in ZrCo compounds;Materials Today Communications;2022-12
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