Two colour experiments in Eu3+ implanted GaN
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference11 articles.
1. Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials
2. Rare-earth-doped GaN: growth, properties, and fabrication of electroluminescent devices
3. Laser action in Eu-doped GaN thin-film cavity at room temperature
4. High-temperature annealing and optical activation of Eu-implanted GaN
5. Structure and role of ultrathin AlN layers for improving optical activation of rare earth implanted GaN
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1. Temporally modulated energy shuffling in highly interconnected nanosystems;Nanophotonics;2020-10-28
2. Excitation Efficiency and Limitations of the Luminescence of Eu3+ Ions in GaN;Physical Review Applied;2020-01-24
3. Self-Organized Eu-Doped GaN Nanocolumn Light-Emitting Diode Grown by RF-Molecular-Beam Epitaxy;physica status solidi (a);2018-10-18
4. Perspective: Toward efficient GaN-based red light emitting diodes using europium doping;Journal of Applied Physics;2018-04-28
5. Excitation pathways and efficiency of Eu ions in GaN by site-selective spectroscopy;Applied Physics B;2009-06-18
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