Effect of structural distortion and nature of bonding on the electronic properties of defect and Li-substituted CuInSe2 chalcopyrite semiconductors
Author:
Funder
Department of Science and Technology, India
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference26 articles.
1. Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties and Applications;Shay,1975
2. Ordered-vacancy-compound semiconductors: PseudocubicCdIn2Se4
3. Manganese-doped ZnSiAs2 chalcopyrite: A new advanced material for spintronics
4. Optical properties of ZnAl2Se4, ZnAl2Se4:Co2+, and ZnAl2Se4:Er3+ single crystals
5. Ternary-compound thin-film solar cells
Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A Novel Approach for Designing a Sub-Bandgap in CuGa(S,Te)2 Thin Films Assisted with Numerical Simulation of Solar Cell Devices for Photovoltaic Application;ACS Omega;2023-06-09
2. Novel AgRhM2 (M =S, Se, Te) chalcopyrites with superior optical properties and solar cell efficiencies;Optical Materials;2022-10
3. Study of sub-band states formation in the optical band gap of CuGaS2 thin films by electronic excitations;Journal of Physics and Chemistry of Solids;2022-05
4. Fe-doped CuGaS2 (CuGa1-xFexS2) - Detailed analysis of the intermediate band optical response of chalcopyrite thin films based on first principle calculations and experimental studies;Materials Science in Semiconductor Processing;2021-12
5. A wide energy range ab initio modeling of the electronic structure of valence states in Cu(In,Ga)Se2: Comparison with photoelectron spectra;Journal of Alloys and Compounds;2019-09
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3