Multiple-barrier distribution behavior of Mo/p-GaTe fabricated with sputtering
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference47 articles.
1. Current transport in metal-semiconductor barriers
2. Field and thermionic-field emission in Schottky barriers
3. Determination of Low Barrier Heights in Metal‐Semiconductor Contacts
4. Effects of image force and tunneling on current transport in metal-semiconductor (Schottky barrier) contacts
5. Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes
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