Effect of quantum confinement on electronic and dielectric properties of niobium dichalcogenides NbX2 (X=S, Se, Te)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference47 articles.
1. Electronic structure of transition metal dichalcogenides monolayers 1H-MX2 (M = Mo, W; X = S, Se, Te) from ab-initio theory: new direct band gap semiconductors
2. Nanosized allotropes of molybdenum disulfide
3. Mechanical and Electronic Properties of MoS2 Nanoribbons and Their Defects
4. Stable, Single-Layer MX2 Transition-Metal Oxides and Dichalcogenides in a Honeycomb-Like Structure
5. Frictional Characteristics of Atomically Thin Sheets
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