Narrow-band photoluminescence at room-temperature in amorphous SiCx:H film-Reference-Cited by-同舟云学术

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Narrow-band photoluminescence at room-temperature in amorphous SiCx:H film

Published:2013-02 Issue: Volume:550 Page:279-282
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Zhou H.P.,Xu M.,Wei D.Y.,Ong T.,Xiao S.Q.,Xu L.X.,Huang S.Y.,Guo Y.N.,Xu S.

Funder

National Research Foundation and the Agency for Science, Technology and Research for Singapore

Nanyang Technological University

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference23 articles.

1. Light Emitting Silicon for Microphotonics, Springer Tracts in Modern Physics;Pavesi,2003

2. Third generation photovoltaics: Ultra-high conversion efficiency at low cost

3. Enhancement of visible photoluminescence in the SiNx films by SiO2 buffer and annealing

4. Structural characterization of annealed Si1−xCx/SiC multilayers targeting formation of Si nanocrystals in a SiC matrix

5. Influence of average size and interface passivation on the spectral emission of Si nanocrystals embedded in SiO2

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of atomic bonding configuration on optical properties of a-Si1−xCx:H thin film;Journal of Alloys and Compounds;2013-05

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