Thermal vacancy formation in Co-based Heusler-type alloys Co2MnZ (Z=Si, Ge, Sn)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference34 articles.
1. Hyperfine fields and electronic structures of the Heusler alloys Co2MnX (X=Al, Ga, Si, Ge, Sn)
2. Slater-Pauling behavior and origin of the half-metallicity of the full-Heusler alloys
3. Electronic structure and Slater–Pauling behaviour in half-metallic Heusler alloys calculated from first principles
4. Atomic disorder effects on half-metallicity of the full-Heusler alloysCo2(Cr1−xFex)Al:A first-principles study
5. Role of structural defects on the half-metallic character ofCo2MnGeandCo2MnSiHeusler alloys
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of disorder and vacancy defects on electrical transport properties of Co2MnGa thin films grown by magnetron sputtering;Journal of Applied Physics;2021-12-14
2. High-density magnetic-vacancy inclusion in Co2MnGa single crystal probed by spin-polarized positron annihilation spectroscopy;Journal of Physics: Condensed Matter;2021-11-09
3. An efficient scheme to tailor the magnetostructural transitions by staged quenching and cyclical ageing in hexagonal martensitic alloys;Acta Materialia;2019-08
4. Native defects in the Co2TiZ (Z=Si,Ge,Sn) full Heusler alloys: Formation and influence on the thermoelectric properties;Physical Review B;2017-08-28
5. Effect of Coulomb interactions and Hartree-Fock exchange on structural, elastic, optoelectronic and magnetic properties of Co2MnSi Heusler: A comparative study;Journal of Magnetism and Magnetic Materials;2016-12
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3