Growth of well-oriented AlxIn1−xN films by sputtering at low temperature
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference34 articles.
1. Epitaxially grown AlN and its optical band gap
2. Synthesis and optical properties of aluminum nitride nanowires prepared by arc discharge method
3. Determination of the branch-point energy of InN: Chemical trends in common-cation and common-anion semiconductors
4. Unusual properties of the fundamental band gap of InN
5. Estimation of band-gap energy of intrinsic InN from photoluminescence properties of undoped and Si-doped InN films grown by plasma-assisted molecular-beam epitaxy
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2. Facile integration of an Al-rich Al1–x In x N photodetector on free-standing GaN by radio-frequency magnetron sputtering;Chinese Physics B;2023-11-01
3. Comparison of the Material Quality of AlxIn1−xN (x—0–0.50) Films Deposited on Si(100) and Si(111) at Low Temperature by Reactive RF Sputtering;Materials;2022-10-21
4. Optical and electrical properties of Al1-xInxN films with a wide middle-composition range by RF sputtering;Applied Physics A;2022-01-22
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