Negative-differential-resistance effects in TlInTe2 ternary semiconductor-Reference-Cited by-同舟云学术

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Negative-differential-resistance effects in TlInTe2 ternary semiconductor

Published:2009-09 Issue:1-2 Volume:484 Page:561-566
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Al-Ghamdi A.A.,Nagat A.T.,Bahabri F.S.,Al-orainy R.H.,Al-harbi S.R.,Al-Hazmi F.S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference26 articles.

1. Reversible Electrical Switching Phenomena in Disordered Structures

2. Switching phenomenon in single crystals of AIIIBVI, A2IIIB3VI, and AIIB2IIIC4VI type compounds

3. Behaviour of switching phenomena in single crystals of TlGaTe2

4. The switching phenomenon in amorphous In2Te3 thin films

5. Easily reversible memory switching in Ge - As - Te glasses

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of the Structural and Switching Properties of Ga₂Te₅ Crystals;ECS Journal of Solid State Science and Technology;2024-04-01

2. Thermoelectric behavior of Tl2GaInTe4 crystals;Indian Journal of Physics;2024-03-29

3. Switching phenomenon in TlGaSe2 layered semiconductor;Solid-State Electronics;2014-04

4. Negative Resistance and Memory Effects in TlInSeS Single Crystals;Japanese Journal of Applied Physics;2013-11-01

5. Memory switching of ZnGa2Te4 thin films;Journal of Materials Science;2012-09-11

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