The electronic band structures of , and alloys
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference41 articles.
1. Progress and prospects of group-III nitride semiconductors
2. Metalorganic chemical vapor deposition growth of InN for InN/Si tandem solar cell
3. Heterostructure Lasers, Part A: Fundamental Principles;Casey,1978
4. Resonant tunneling in AlSb/InAs/AlSb double‐barrier heterostructures
5. InAs/AlSb heterostructure field-effect transistors using a Si-doped InAs/AlSb short-period superlattice modulation doping barrier
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