2H-SiC films grown by laser chemical vapor deposition-Reference-Cited by-同舟云学术

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2H-SiC films grown by laser chemical vapor deposition

Published:2015-12 Issue:16 Volume:35 Page:4611-4615
ISSN:0955-2219
Container-title:Journal of the European Ceramic Society
language:en
Short-container-title:Journal of the European Ceramic Society

Author:

Ito Akihiko^ORCID,Kanno Hitoshi,Goto Takashi

Funder

Japan Society for the Promotion of Science (JSPS)

Council for Science, Technology and Innovation (CSTI)

Cross-ministerial Strategic Innovation Promotion Program (SIP)

“Structural Materials for Innovation” (Funding agency: JST)

Publisher

Elsevier BV

Subject

Materials Chemistry,Ceramics and Composites

Reference35 articles.

1. Advances in silicon carbide science and technology at the micro- and nanoscales;Maboudian;J. Vac. Sci. Technol. A,2013

2. Growth, luminescence, selection rules, and lattice sums of SiC with wurtzite structure;Patrick;Phys. Rev.,1966

3. Present atatus and future prospect of widegap semiconductor high-power devices;Okumura;Jpn. J. Appl. Phys.,2006

4. Monte Carlo simulation of electron transport in 2H-SiC using a three valley analytical conduction band model;Nilsson;J. Appl. Phys.,1999

5. Synthesis of the wurtzite form of silicon carbide;Merz;J. Am. Chem. Soc.,1959

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3. Development of Ultra-High Temperature Ceramics;COMPOS RES;2022

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