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Thermal conductivity of plasma-enhanced atomic layer deposited hafnium zirconium oxide dielectric thin films

  • Published:2021-06 Issue:6 Volume:41 Page:3397-3403
  • ISSN:0955-2219
  • Container-title:Journal of the European Ceramic Society
  • language:en
  • Short-container-title:Journal of the European Ceramic Society

Author:

Kim Jihyun,Lee Sungje,Song YiwenORCID,Choi SukwonORCID,An Jihwan,Cho Jungwan

Funder

Ministry of Trade, Industry and Energy

National Research Foundation of Korea

Air Force Office of Scientific Research

Publisher

Elsevier BV

Subject

Materials Chemistry,Ceramics and Composites

Reference58 articles.

1. Emerging applications for high k materials in VLSI technology;Clark;Mater.,2014

2. From the future Si technology perspective: challenges and opportunities;Kim;Int. Electron Devices Meet. IEEE,2010

3. High-k dielectrics for future generation memory devices (Invited Paper);Kittl;Microelectron. Eng.,2009

4. Capacitors with an equivalent oxide thickness of <0.5 nm for nanosclae electronic semiconductor memory;Kim;Adv. Funct. Mater.,2010

5. Atomic layer deposition of high-k oxides of the group 4 metals for memory applications;Niinistö;Adv. Eng. Mater.,2009

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