Morphology and structure of indium nitride films
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference13 articles.
1. Proc. 3rd. Intern. Conf. on Semi-Insulating III–V Materials;Tansley,1984
2. Influence of apparatus geometry and deposition conditions on the structure and topography of thick sputtered coatings
3. A unified approach to habit and crystal growth analysis
4. Revised structure zone model for thin film physical structure
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