Trapping properties of the silicon-silicon dioxide interface from electrochemical current-voltage behaviour-Reference-Cited by-同舟云学术

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Trapping properties of the silicon-silicon dioxide interface from electrochemical current-voltage behaviour

Published:1979-05 Issue:4 Volume:2 Page:502-513
ISSN:0378-5963
Container-title:Applications of Surface Science
language:en
Short-container-title:Applications of Surface Science

Author:

Wolkenberg Andrzej

Publisher

Elsevier BV

Subject

General Engineering

Reference35 articles.

1. Physics and Technology of Semiconductor Devices;Grove,1967

2. Physics of Semiconductor Devices;Sze,1969

3. METAL‐DEPENDENT INTERFACE STATES IN THIN MOS STRUCTURES

4. Interface states in MOS structures with 20–40 Å thick SiO2 films on nondegenerate Si

5. Current Injection in Solids;Lampert,1970

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A classification of chemically sensitive semiconductor devices;Sensors and Actuators;1985-05

2. A Mechanism for the Effect of Doping on the Silicon Native Oxide Thickness;Physica Status Solidi (a);1983-09-16

3. TRAPS IN SiO2-Si STRUCTURE DETERMINED BY ELECTROCHEMICAL METHOD;The Physics of MOS Insulators;1980

4. Properties of boron implanted silicon dioxide;Applications of Surface Science;1979-07

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