Fabrication of SOI wafers with buried cavities using silicon fusion bonding and electrochemical etchback-Reference-Cited by-同舟云学术

Fabrication of SOI wafers with buried cavities using silicon fusion bonding and electrochemical etchback

Published:1996-06 Issue:1-3 Volume:54 Page:709-713
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Mark Noworolski J.,Klaassen Erno,Logan John,Petersen Kurt,Maluf Nadim I.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Surface micromachining processes for electrostatic micoactuator fabrication;Lober,1988

2. A technology for integated transducers;Guckel,1985

3. SOI (SIMOX) as a substrate for surface micromachining of single crystalline silicon sensors and actuators;Diem,1993

4. Micromachined structures fabricated using a wafer-bonded sealed cavity process;Hsu,1994

5. Silicon accelerometer with new thermal self-test mechanism;Pourahmadi,1992

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