Highly sensitive near IR detectors using n-type porous Si-Reference-Cited by-同舟云学术

Highly sensitive near IR detectors using n-type porous Si

Published:2003-04 Issue:2 Volume:104 Page:117-120
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Raissi Farshid,Sheeni Naveed A.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference8 articles.

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3. The theory of hot-electron photoemission in Schottky-barrier IR detectors;Mooney;IEEE Trans. Electr. Device,1985

4. H. Elabd, W.F. Kosonocky, Theory and measurements of photoresponse of thin film Pd2Si and PtSi Schottky-barrier detectors with optical cavity, RCA Rev. 43 (1982) 569–589.

5. S.M. Sze, Physics of Semiconductor Devices, Wiley, New York, 1981 (Chapter 5).

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