Silicon strain sensitive unijunction transistor with controlling p–n-junction-Reference-Cited by-同舟云学术

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Silicon strain sensitive unijunction transistor with controlling p–n-junction

Published:2002-09 Issue:2-3 Volume:100 Page:236-243
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Babichev G.G.,Kozlovskiy S.I.,Romanov V.A.,Sharan N.N.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. S.M. Sze, Physics of Semiconductor Devices, Vol. 1, Wiley, New York, 1981, p. 350.

2. I.G. Nedoluzhko, E.F. Sergienko, Unijunction Transistors, Energia, Moscow, 1974, p. 102 (in Russian).

3. Frequency gauges on the basis of a single-junction transistor;Vikulin;Radiotech. Electron.,1973

4. I.M. Vikulin, L.F. Vikulina, V.I. Stafeev, Galvanomagnetic Devices, Radio i sviaz, Moscow, 1983, p. 104 (in Russian).

5. Motorola Pressure Sensor Device Data, Rev. 1, Motorola, 1994.

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Frequency-output sensors-transducers based on unijunction transistors;Journal of Communications Technology and Electronics;2014-03

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