Recent advances in silicon etching for MEMS using the ASE™ process-Reference-Cited by-同舟云学术

Recent advances in silicon etching for MEMS using the ASE™ process

Published:1999-04 Issue:1-3 Volume:74 Page:13-17
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Hynes A.M.,Ashraf H.,Bhardwaj J.K.,Hopkins J.,Johnston I.,Shepherd J.N.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference2 articles.

1. F. Lärmer, A. Schilp, Method of Anisotropically Etching Silicon, German Patent DE4241045C1, USA patents 4855017 and 4784720.

2. Advanced silicon etching using high density plasmas;Bhardwaj;Proc. SPIE Micromachining and Microfabrication Process Technology,1995

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