New metallurgical systems for electronic soldering applications-Reference-Cited by-同舟云学术

New metallurgical systems for electronic soldering applications

Published:1999-04 Issue:1-3 Volume:74 Page:70-76
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Gonçalves C,Ferreira J,Fortunato E,Ferreira I,Martins R,Marvão A.P,Martins J.I,Harder T,Oppelt R

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. J. Brauer, Design and materials, in: M.L. Minges (Ed.), Electronic Materials Handbook, Vol. 1, Packaging, Metals Park, OH, 1989, pp. 1–142.

2. H.K. Charles, Components and discrete chip mounting technologies, in: M.L. Minges (Ed.), Electronic Materials Handbook, Vol. 1, Packaging, Metals Park, OH, 1989, pp. 203–237.

3. T. Harder, P. Kertz, R. Martins, D. Mathelin, R. Oppelt, B.C. Petersen, I. Shvets. Small gap intermetallic joining for high temperature applications. Proc. HITEN 97, 14–17 September 1997, Toulouse, France.

4. Rapid formation of intermetallic compounds by interdiffusion in the Cu–Sn system;Bader;Acta Met.,1995

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. New Adhesion Process Based on Lead-Free Solder Applied in Electronic Power Devices;Key Engineering Materials;2002-10

2. Production of low cost contacts and joins for large area devices by electrodeposition of Cu and Sn;Applied Surface Science;2000-12

3. Morphological and structural characteristics presented by the Cu–Sn–Cu metallurgical system used in electronic joints;Materials Science and Engineering: A;2000-09

4. Role of soldering parameters on the electrical performances presented by Cu–Sn–Cu joints used in power diodes;Materials Science and Engineering: A;2000-09

5. Performances of an optical ruler based on one-dimensional hydrogenated amorphous Si position-sensitive detectors produced using different metal contacts;Philosophical Magazine B;2000-04