Calibration and temperature compensation of silicon pressure sensors using ion-implanted trimming resistors-Reference-Cited by-同舟云学术

Calibration and temperature compensation of silicon pressure sensors using ion-implanted trimming resistors

Published:1999-01 Issue:2 Volume:72 Page:148-152
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Lee Bo-Na,Kim Kun-Nyun,Park Hyo-Derk,Shin Sang-Mo

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference5 articles.

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3. Motorola Semiconductors for Automotive Electronics System, Motorola brochure SGBR932S/D, 1990.

4. MOS integrated silicon pressure sensor;Tanigawa;IEEE Trans. Electron Devices,1985

5. U. Schoneberg, et al., CMOS Integrated Capacitive Pressure Transducer with On-Chip Electronics and Digital Capability, Tech Digest Transducers '91, San Francisco, 1991, pp. 304–307.

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