Ultra-sensitive spin-valve structures grown on n-GaAs by single bath electrodeposition-Reference-Cited by-同舟云学术

Ultra-sensitive spin-valve structures grown on n-GaAs by single bath electrodeposition

Published:2000-04 Issue:1-3 Volume:81 Page:9-12
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Attenborough K.,Boeve H.,de Boeck J.,Borghs G.,Celis J.-P.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Exchange-biased spin-values for magnetic storage;Kools;IEEE Trans. Magn.,1996

2. Giant magnetoresistance in electrodeposited films;Schwarzacher;IEEE Trans. Magn.,1996

3. R. Hart, M. Alper, K. Attenborough, W. Schwarzacher, Giant magnetoresistance in Ni–Co–Cu/Cu superlattices electrodeposited on n-type (100) GaAs substrates, Proc. 3rd International Symposium on Magnetic Materials, Processes and Devices, Electrochem. Soc. Proc. 94 (1994) 215–221.

4. K. Attenborough, H. Boeve, J. De Boeck, G. Borghs, J.-P. Celis, Electrodeposited spin-valves on n-type GaAs, submitted to Appl. Phys. Lett.

5. GMR sensor scheme with artificial antiferromagnetic subsystem;van den Berg;IEEE Trans. Magn.,1996

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