Structural aspects of tertiary amine adducts of alane and gallane
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Physical and Theoretical Chemistry
Reference32 articles.
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2. Organometallic precursors in the growth of epitaxial thin films of III-V semiconductors by metal-organic chemical vapor deposition (MOCVD)
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4. Trimethylamine complexes of alane as precursors for the low-pressure chemical vapor deposition of aluminum
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